Semikron Danfoss SEMiX303GB12E4p, Type N-Channel IGBT Module, 469 A 1200 V, 11-Pin SEMiX3p, Surface

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SGD393.16

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SGD428.54

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RS Stock No.:
122-0391
Mfr. Part No.:
SEMiX303GB12E4p
Manufacturer:
Semikron Danfoss
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Brand

Semikron Danfoss

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

469A

Maximum Collector Emitter Voltage Vceo

1200V

Package Type

SEMiX3p

Mount Type

Surface

Channel Type

Type N

Pin Count

11

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.4V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Length

150mm

Series

Trench

Height

17mm

Standards/Approvals

No

Width

62.4 mm

Automotive Standard

No

SEMiX® Dual IGBT Modules


Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.

For suitable press-fit gate driver modules see 122-0385 to 122-0387

• Low profile solder-free mounting package

• Trenchgate technology IGBTs

• VCE(sat) has positive temperature coefficient

• High short circuit current capability

• Press-fit pins as auxiliary contacts

• UL recognized

IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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