Infineon IKQ50N120CH3XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 162-3287
- Mfr. Part No.:
- IKQ50N120CH3XKSA1
- Manufacturer:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 162-3287
- Mfr. Part No.:
- IKQ50N120CH3XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
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Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 652 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 3 | |
| Switching Speed | 60kHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.9 x 5.1 x 21.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 4.9mJ | |
| Minimum Operating Temperature | -40 °C | |
| Gate Capacitance | 3269pF | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 652 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 3 | ||
Switching Speed 60kHz | ||
Transistor Configuration Single | ||
Dimensions 15.9 x 5.1 x 21.1mm | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 4.9mJ | ||
Minimum Operating Temperature -40 °C | ||
Gate Capacitance 3269pF | ||
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.
High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
20% lower R th(jh) compared to TO-247 3 pin
Extended collector-emitter pin creepage of 4.25 mm
Extended clip creepage due to fully encapsulated front side of the package
Higher system power density – I c increase keeping the same system thermal performance
Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247
Higher reliability, extended lifetime of the device
20% lower R th(jh) compared to TO-247 3 pin
Extended collector-emitter pin creepage of 4.25 mm
Extended clip creepage due to fully encapsulated front side of the package
Higher system power density – I c increase keeping the same system thermal performance
Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247
Higher reliability, extended lifetime of the device