onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

SGD19.91

(exc. GST)

SGD21.702

(inc. GST)

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  • 8 unit(s) ready to ship from another location
  • Plus 28 unit(s) shipping from 08 January 2026
  • Plus 30 unit(s) shipping from 01 April 2026
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Units
Per unit
Per Pack*
2 - 8SGD9.955SGD19.91
10 - 48SGD9.445SGD18.89
50 - 98SGD8.70SGD17.40
100 - 248SGD8.095SGD16.19
250 +SGD7.555SGD15.11

*price indicative

Packaging Options:
RS Stock No.:
123-8830
Mfr. Part No.:
NGTB25N120FL3WG
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Gate Capacitance

3085pF

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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