onsemi NGTB35N65FL2WG, Type N-Channel IGBT-Field Stop II, 70 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

SGD17.23

(exc. GST)

SGD18.78

(inc. GST)

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Orders below SGD150.00 (exc. GST) cost SGD25.00.
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Units
Per unit
Per Pack*
2 - 8SGD8.615SGD17.23
10 - 38SGD7.765SGD15.53
40 - 98SGD7.69SGD15.38
100 - 198SGD7.415SGD14.83
200 +SGD7.34SGD14.68

*price indicative

Packaging Options:
RS Stock No.:
842-7898
Mfr. Part No.:
NGTB35N65FL2WG
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

70A

Product Type

IGBT-Field Stop II

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

300W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Maximum Operating Temperature

175°C

Length

20.8mm

Standards/Approvals

RoHS

Series

Field Stop

Width

16.25 mm

Height

5.3mm

Automotive Standard

No

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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