onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

SGD17.23

(exc. GST)

SGD18.78

(inc. GST)

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Per unit
Per Pack*
2 - 8SGD8.615SGD17.23
10 - 38SGD7.765SGD15.53
40 - 98SGD7.69SGD15.38
100 - 198SGD7.415SGD14.83
200 +SGD7.34SGD14.68

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Packaging Options:
RS Stock No.:
842-7898
Mfr. Part No.:
NGTB35N65FL2WG
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

70 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

300 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.08mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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