onsemi, Type N-Channel Field Stop IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

SGD111.45

(exc. GST)

SGD121.47

(inc. GST)

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Orders below SGD150.00 (exc. GST) cost SGD25.00.
In Stock
  • Plus 120 unit(s) shipping from 16 February 2026
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Units
Per unit
Per Tube*
30 - 30SGD3.715SGD111.45
60 - 120SGD3.603SGD108.09
150 - 270SGD3.459SGD103.77
300 - 570SGD3.286SGD98.58
600 +SGD3.089SGD92.67

*price indicative

RS Stock No.:
124-1334
Mfr. Part No.:
FGH40N60SFDTU
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Field Stop IGBT

Maximum Continuous Collector Current Ic

80A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

290W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

25ns

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Series

Field Stop

Automotive Standard

AEC-Q101

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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