STMicroelectronics STGW30H60DFB, Type N-Channel Trench Gate Field Stop IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

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SGD9.08

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SGD9.90

(inc. GST)

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Per Pack*
2 - 8SGD4.54SGD9.08
10 - 38SGD3.915SGD7.83
40 - 98SGD3.60SGD7.20
100 - 198SGD3.335SGD6.67
200 +SGD3.055SGD6.11

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Packaging Options:
RS Stock No.:
860-7450
Mfr. Part No.:
STGW30H60DFB
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

30A

Product Type

Trench Gate Field Stop IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

260W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

5.15 mm

Length

15.75mm

Height

20.15mm

Series

HB

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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