STMicroelectronics STGWA50M65DF2AG, Type N-Channel Single IGBT, 119 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

SGD169.50

(exc. GST)

SGD184.80

(inc. GST)

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Units
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Per Tube*
30 +SGD5.65SGD169.50

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RS Stock No.:
215-008
Mfr. Part No.:
STGWA50M65DF2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

119A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Number of Transistors

1

Maximum Power Dissipation Pd

576W

Package Type

TO-247

Configuration

Single

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

20.1mm

Width

15.9mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics IGBT developed using an Advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Minimized tail current

Tight parameter distribution

Safer paralleling

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