STMicroelectronics STGWA50M65DF2AG, Type N-Channel Single IGBT, 119 A 650 V, 3-Pin TO-247, Through Hole

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Packaging Options:
RS Stock No.:
215-009
Mfr. Part No.:
STGWA50M65DF2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

119A

Maximum Collector Emitter Voltage Vceo

650V

Number of Transistors

1

Maximum Power Dissipation Pd

576W

Configuration

Single

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Length

20.1mm

Width

15.70 to 15.90 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics IGBT developed using an Advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Minimized tail current

Tight parameter distribution

Safer paralleling

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