Infineon IRS21834STRPBF, Gate Driver 625 V, SOIC-14N
- RS Stock No.:
- 258-4012
- Mfr. Part No.:
- IRS21834STRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD5.74
(exc. GST)
SGD6.26
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD2.87 | SGD5.74 |
| 10 - 98 | SGD2.575 | SGD5.15 |
| 100 - 248 | SGD2.43 | SGD4.86 |
| 250 - 498 | SGD2.11 | SGD4.22 |
| 500 + | SGD2.00 | SGD4.00 |
*price indicative
- RS Stock No.:
- 258-4012
- Mfr. Part No.:
- IRS21834STRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver Module | |
| Package Type | SOIC-14N | |
| Fall Time | 35ns | |
| Driver Type | Gate Driver | |
| Rise Time | 40ns | |
| Minimum Supply Voltage | 3.3V | |
| Maximum Supply Voltage | 625V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver Module | ||
Package Type SOIC-14N | ||
Fall Time 35ns | ||
Driver Type Gate Driver | ||
Rise Time 40ns | ||
Minimum Supply Voltage 3.3V | ||
Maximum Supply Voltage 625V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon half bridge driver are high voltage, high speed power MOSFET and IGBT drivers with dependent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Gate drive supply range from 10 V to 20 V
Under voltage lockout for both channels
3.3 V and 5 V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5 V offset
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4 A/1.8 A
RoHS compliant