Infineon IRS2118STRPBF MOSFET Gate Driver, 290 mA 8-Pin 20 V, SOIC

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Subtotal (1 pack of 10 units)*

SGD8.74

(exc. GST)

SGD9.53

(inc. GST)

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Per unit
Per Pack*
10 - 20SGD0.874SGD8.74
30 - 40SGD0.842SGD8.42
50 +SGD0.789SGD7.89

*price indicative

Packaging Options:
RS Stock No.:
226-6194
Mfr. Part No.:
IRS2118STRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Output Current

290mA

Pin Count

8

Package Type

SOIC

Fall Time

65ns

Driver Type

MOSFET

Number of Outputs

5

Rise Time

75ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

20V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Height

1.75mm

Series

IRS

Length

5mm

Width

4 mm

Mount Type

Surface

Automotive Standard

No

The Infineon IRS2118 are high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized mono­lithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600 V.

Gate drive supply range from 10 V to 20V

Undervoltage lockout

CMOS Schmitt-triggered inputs with pull-down

Output in phase with input

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