Infineon MOSFET Gate Driver, 290 mA 8-Pin 20 V, SOIC

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Subtotal (1 reel of 2500 units)*

SGD2,790.00

(exc. GST)

SGD3,040.00

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 5000SGD1.116SGD2,790.00
7500 - 10000SGD1.074SGD2,685.00
12500 +SGD1.007SGD2,517.50

*price indicative

RS Stock No.:
226-6193
Mfr. Part No.:
IRS2118STRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Output Current

290mA

Pin Count

8

Fall Time

65ns

Package Type

SOIC

Driver Type

MOSFET

Number of Outputs

5

Rise Time

75ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

20V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Height

1.75mm

Standards/Approvals

No

Series

IRS

Length

5mm

Width

4 mm

Mount Type

Surface

Automotive Standard

No

The Infineon IRS2118 are high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized mono­lithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600 V.

Gate drive supply range from 10 V to 20V

Undervoltage lockout

CMOS Schmitt-triggered inputs with pull-down

Output in phase with input

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