Infineon 2ED2304S06FXUMA1 MOSFET Gate Driver 2, 360 mA 8-Pin 600 V, DSO

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Subtotal (1 pack of 15 units)*

SGD19.38

(exc. GST)

SGD21.12

(inc. GST)

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15 - 30SGD1.292SGD19.38
45 - 60SGD1.243SGD18.65
75 +SGD1.165SGD17.48

*price indicative

Packaging Options:
RS Stock No.:
226-6033
Mfr. Part No.:
2ED2304S06FXUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Gate Driver

Output Current

360mA

Pin Count

8

Fall Time

40ns

Package Type

DSO

Driver Type

MOSFET

Number of Outputs

2

Rise Time

48ns

Minimum Supply Voltage

20V

Number of Drivers

2

Maximum Supply Voltage

600V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

RoHS

Width

4 mm

Length

5mm

Series

2ED2304S06F

Height

1.75mm

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2304S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

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