Infineon 2ED2388S06FXUMA1, Isolated Gate Driver 1, 1 A 8-Pin 20 V, DSO-8
- RS Stock No.:
- 349-170
- Mfr. Part No.:
- 2ED2388S06FXUMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
SGD14.05
(exc. GST)
SGD15.31
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD1.405 | SGD14.05 |
| 100 - 240 | SGD1.334 | SGD13.34 |
| 250 - 490 | SGD1.236 | SGD12.36 |
| 500 - 990 | SGD1.138 | SGD11.38 |
| 1000 + | SGD1.095 | SGD10.95 |
*price indicative
- RS Stock No.:
- 349-170
- Mfr. Part No.:
- 2ED2388S06FXUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver IC | |
| Output Current | 1A | |
| Pin Count | 8 | |
| Fall Time | 70ns | |
| Package Type | DSO-8 | |
| Driver Type | Isolated Gate Driver | |
| Rise Time | 70ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 1 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.75mm | |
| Standards/Approvals | RoHS | |
| Series | 2ED2388S06F | |
| Length | 4.9mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver IC | ||
Output Current 1A | ||
Pin Count 8 | ||
Fall Time 70ns | ||
Package Type DSO-8 | ||
Driver Type Isolated Gate Driver | ||
Rise Time 70ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 1 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.75mm | ||
Standards/Approvals RoHS | ||
Series 2ED2388S06F | ||
Length 4.9mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Infineon 650 V Half bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs. Based on our SOI-technology, its offer excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Negative VS transient immunity of 100 V
Integrated ultra fast and low resistance bootstrap diode
90 ns propagation delay
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
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