Infineon 1Mbit I2C FRAM Memory 8-Pin SOIC, FM24V10-G
- RS Stock No.:
- 188-5405
- Mfr. Part No.:
- FM24V10-G
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 97 units)*
SGD2,012.459
(exc. GST)
SGD2,193.558
(inc. GST)
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In Stock
- 194 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 97 - 97 | SGD20.747 | SGD2,012.46 |
| 194 - 194 | SGD18.507 | SGD1,795.18 |
| 291 - 485 | SGD17.575 | SGD1,704.78 |
| 582 + | SGD17.399 | SGD1,687.70 |
*price indicative
- RS Stock No.:
- 188-5405
- Mfr. Part No.:
- FM24V10-G
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 1Mbit | |
| Organisation | 128K x 8 bit | |
| Interface Type | I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 450ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2 V | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 128k | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 1Mbit | ||
Organisation 128K x 8 bit | ||
Interface Type I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 450ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2 V | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 128k | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.