Infineon Low Noise Silicon Bipolar RF Transistor, 65 mA, 20 V, 4-Pin SOT-143
- RS Stock No.:
- 273-7294
- Mfr. Part No.:
- BFP183E7764HTSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
SGD11.70
(exc. GST)
SGD12.75
(inc. GST)
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In Stock
- 2,950 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD0.234 | SGD11.70 |
| 100 - 200 | SGD0.214 | SGD10.70 |
| 250 - 450 | SGD0.197 | SGD9.85 |
| 500 - 950 | SGD0.193 | SGD9.65 |
| 1000 + | SGD0.19 | SGD9.50 |
*price indicative
- RS Stock No.:
- 273-7294
- Mfr. Part No.:
- BFP183E7764HTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Low Noise Silicon Bipolar RF Transistor | |
| Maximum DC Collector Current Idc | 65mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-143 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Power Dissipation Pd | 250mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP183 | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Low Noise Silicon Bipolar RF Transistor | ||
Maximum DC Collector Current Idc 65mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-143 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Power Dissipation Pd 250mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP183 | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon Silicon Bipolar RF Transistor is designed for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This RF transistor has qualification report according to AEC Q101.
Pb free package
RoHS compliant
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