Infineon RF Bipolar Transistor, 150 mA NPN, 13 V, 4-Pin TSFP-4-1

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

SGD1,071.00

(exc. GST)

SGD1,167.00

(inc. GST)

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  • Shipping from 07 January 2027
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Units
Per unit
Per Reel*
3000 +SGD0.357SGD1,071.00

*price indicative

RS Stock No.:
259-1445
Mfr. Part No.:
BFP650H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

150mA

Maximum Collector Emitter Voltage Vceo

13V

Package Type

TSFP-4-1

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

13V

Maximum Transition Frequency ft

42GHz

Maximum Emitter Base Voltage VEBO

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

500mW

Minimum DC Current Gain hFE

110

Transistor Polarity

NPN

Maximum Operating Temperature

150°C

Pin Count

4

Series

BFP

Standards/Approvals

RoHS

Height

0.9mm

Length

2mm

Automotive Standard

No

The Infineon high linearity low noise SiGe:C NPN RF transistor, It is easy to use Pb-free (RoHS compliant) standard package with visible leads.

Driver amplifier

ISM bands 434 and 868 MHz

1.9 GHz Cordless phones

CATV LNA

Transmitter driver amplifier

Output stage LNA for Active antennas

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