Infineon BFP640ESDH6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 13 V, 4-Pin SOT-343

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Subtotal (1 pack of 10 units)*

SGD4.11

(exc. GST)

SGD4.48

(inc. GST)

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  • 2,990 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40SGD0.411SGD4.11
50 - 90SGD0.399SGD3.99
100 - 240SGD0.387SGD3.87
250 - 990SGD0.375SGD3.75
1000 +SGD0.364SGD3.64

*price indicative

Packaging Options:
RS Stock No.:
259-1439
Mfr. Part No.:
BFP640ESDH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

50mA

Maximum Collector Emitter Voltage Vceo

13V

Package Type

SOT-343

Mount Type

Surface

Maximum Collector Base Voltage VCBO

13V

Minimum Operating Temperature

-65°C

Maximum Transition Frequency ft

70GHz

Maximum Emitter Base Voltage VEBO

1.2V

Maximum Power Dissipation Pd

200mW

Minimum DC Current Gain hFE

110

Transistor Polarity

NPN

Maximum Operating Temperature

150°C

Pin Count

4

Height

0.9mm

Series

BFP640

Standards/Approvals

Pb-Free (RoHS)

Length

2mm

Automotive Standard

AEC-Q101

The Infineon high gain low noise RF transistor provides outstanding performance for a wide range of wireless applications & Ideal for CDMA and WLAN applications.

Gold metallization for extra high reliability

70 GHz fT-Silicon Germanium technology

Pb-free (RoHS compliant) package

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