Infineon BFP540ESDH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1432
- Mfr. Part No.:
- BFP540ESDH6327XTSA1
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 pack of 25 units)*
SGD11.10
(exc. GST)
SGD12.10
(inc. GST)
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In Stock
- 2,300 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.444 | SGD11.10 |
| 50 - 75 | SGD0.431 | SGD10.78 |
| 100 - 225 | SGD0.414 | SGD10.35 |
| 250 - 975 | SGD0.393 | SGD9.83 |
| 1000 + | SGD0.369 | SGD9.23 |
*price indicative
- RS Stock No.:
- 259-1432
- Mfr. Part No.:
- BFP540ESDH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 10V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 10V | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 30GHz | |
| Maximum Emitter Base Voltage VEBO | 1V | |
| Maximum Power Dissipation Pd | 250mW | |
| Minimum DC Current Gain hFE | 50 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 2mm | |
| Standards/Approvals | RoHS | |
| Series | BFP540 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 10V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 10V | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 30GHz | ||
Maximum Emitter Base Voltage VEBO 1V | ||
Maximum Power Dissipation Pd 250mW | ||
Minimum DC Current Gain hFE 50 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 2mm | ||
Standards/Approvals RoHS | ||
Series BFP540 | ||
Automotive Standard No | ||
The Infineon NPN silicon RF transistor for ESD protected high gain low noise amplifier. It has excellent ESD performance typical Value 1000 V (HBM).
Outstanding Gms 21.5 dB
Noise figure F 0.9 dB
Gold metallization for high reliability
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