Infineon BFR182E6327HTSA1 Bipolar Transistor, 35 mA NPN, 20 V, 3-Pin SOT-23
- RS Stock No.:
- 258-7726
- Distrelec Article No.:
- 304-40-491
- Mfr. Part No.:
- BFR182E6327HTSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
SGD6.35
(exc. GST)
SGD6.925
(inc. GST)
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In Stock
- 2,000 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.254 | SGD6.35 |
| 50 - 75 | SGD0.246 | SGD6.15 |
| 100 - 225 | SGD0.237 | SGD5.93 |
| 250 - 975 | SGD0.225 | SGD5.63 |
| 1000 + | SGD0.212 | SGD5.30 |
*price indicative
- RS Stock No.:
- 258-7726
- Distrelec Article No.:
- 304-40-491
- Mfr. Part No.:
- BFR182E6327HTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Power Dissipation Pd | 250mW | |
| Minimum Operating Temperature | -65°C | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 2.9mm | |
| Height | 1mm | |
| Series | BFR182 | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Power Dissipation Pd 250mW | ||
Minimum Operating Temperature -65°C | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 2.9mm | ||
Height 1mm | ||
Series BFR182 | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.
Pb free RoHS compliant package
VCEO max is 12 V
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