Infineon BFP640FH6327XTSA1 NPN RF Bipolar Transistor, 50 mA NPN, 4 V, 4-Pin TSFP
- RS Stock No.:
- 216-8352
- Mfr. Part No.:
- BFP640FH6327XTSA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 50 units)*
SGD24.10
(exc. GST)
SGD26.25
(inc. GST)
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In Stock
- Plus 2,600 unit(s) shipping from 08 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD0.482 | SGD24.10 |
| 100 - 100 | SGD0.442 | SGD22.10 |
| 150 - 200 | SGD0.407 | SGD20.35 |
| 250 - 450 | SGD0.379 | SGD18.95 |
| 500 + | SGD0.368 | SGD18.40 |
*price indicative
- RS Stock No.:
- 216-8352
- Mfr. Part No.:
- BFP640FH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | NPN RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 4V | |
| Package Type | TSFP | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 42GHz | |
| Maximum Power Dissipation Pd | 200mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP640F | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type NPN RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 4V | ||
Package Type TSFP | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 42GHz | ||
Maximum Power Dissipation Pd 200mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP640F | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BFP series is a RF bipolar transistor based on silicon germanium technology. Its transition frequency of 42 GHz and high linearity characteristics at low currents make the device suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use.
Provides outstanding performance for a wide range of wireless applications
Ideal for CDMA and WLAN applications
High maximum stable gain
Gold metallization for extra high reliability
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