Microchip 2N3019 Transistor, 1 A NPN, 80 V, 3-Pin TO
- RS Stock No.:
- 838-605
- Mfr. Part No.:
- 2N3019
- Manufacturer:
- Microchip
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SGD22.44
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SGD24.46
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Units | Per unit |
|---|---|
| 1 + | SGD22.44 |
*price indicative
- RS Stock No.:
- 838-605
- Mfr. Part No.:
- 2N3019
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 1A | |
| Maximum Collector Emitter Voltage Vceo | 80V | |
| Package Type | TO | |
| Mount Type | Threaded Through Hole | |
| Transistor Configuration | Silicon Transistor | |
| Maximum Collector Base Voltage VCBO | 140V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 800mW | |
| Maximum Emitter Base Voltage VEBO | 7V | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Operating Temperature | 200°C | |
| Pin Count | 3 | |
| Height | 6.6mm | |
| Length | 9.4mm | |
| Standards/Approvals | MIL-PRF-19500/391 | |
| Series | JEDEC Registered 2N Military Low Power Transistor | |
| Width | 9.4mm | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 1A | ||
Maximum Collector Emitter Voltage Vceo 80V | ||
Package Type TO | ||
Mount Type Threaded Through Hole | ||
Transistor Configuration Silicon Transistor | ||
Maximum Collector Base Voltage VCBO 140V | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 800mW | ||
Maximum Emitter Base Voltage VEBO 7V | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Operating Temperature 200°C | ||
Pin Count 3 | ||
Height 6.6mm | ||
Length 9.4mm | ||
Standards/Approvals MIL-PRF-19500/391 | ||
Series JEDEC Registered 2N Military Low Power Transistor | ||
Width 9.4mm | ||
Non Compliant
- COO (Country of Origin):
- PH
The Microchip radiation-hardened low-power NPN silicon transistor, specifically designed for high-reliability applications. It offers robust performance in demanding environments where reliability and efficiency are critical.
Qualified under multiple RHA levels for enhanced reliability
Available in both leaded and lightweight package options
Operates within a wide junction temperature range of -65 to +200 °C
Low power dissipation with maximum ratings suitable for various applications