MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 165-6980
Mfr. Part No.SIRA14DP-T1-GE3
BrandVishay
SGD0.356
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N 58 A 30 V 8.5 mΩ PowerPAK SO Surface Mount 8 -16 V, +20 V Enhancement - 1.1V 31.2 W Single 1
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Mfr. Part No.SMP3003-DL-1E
SGD3.66
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P 100 A 75 V 11 mΩ D2PAK (TO-263) Surface Mount 3 -20 V, +20 V Enhancement 2.6V - 90 W Single 1
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Mfr. Part No.NTMFS5C430NLT1G
SGD1.87
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N 200 A 40 V 2.2 mΩ DFN Surface Mount 5 -20 V, +20 V Enhancement 2V 1.2V 110 W Single 1
RS Stock No. 752-8397
Mfr. Part No.IPW60R045CPFKSA1
BrandInfineon
SGD25.28
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N 60 A 650 V 45 mΩ TO-247 Through Hole 3 -20 V, +20 V Enhancement 3.5V 2.5V 431 W Single 1
RS Stock No. 166-3420
Mfr. Part No.FDD7N25LZTM
SGD0.552
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N 6.2 A 250 V 570 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement - 3V 56 W Single 1
RS Stock No. 165-8200
Mfr. Part No.IRF9Z24NSTRLPBF
BrandInfineon
SGD0.593
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P 12 A 55 V 175 mΩ D2PAK (TO-263) Surface Mount 3 -20 V, +20 V Enhancement 4V 2V 45 W Single 1
RS Stock No. 486-2149
Mfr. Part No.STN2NF10
SGD1.26
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N 2.4 A 100 V 260 mΩ SOT-223 Surface Mount 3 + Tab -20 V, +20 V Enhancement 4V 2V 3.3 W Single 1
RS Stock No. 671-0719
Mfr. Part No.FDS8858CZ
SGD1.48
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N, P 7.3 A, 8.6 A 30 V 17 mΩ, 21 mΩ SOIC Surface Mount 8 -25 V, -20 V, +20 V, +25 V Enhancement - 1V 1.6 W Isolated 2
RS Stock No. 145-5463
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SGD3.812
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N 75 A 80 V 10 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 270 W Single 1
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Mfr. Part No.SPA07N60C3XKSA1
BrandInfineon
SGD3.36
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N 7.3 A 650 V 600 mΩ TO-220FP Through Hole 3 -20 V, +20 V Enhancement 3.9V 2.1V 32 W Single 1
RS Stock No. 896-2381
Mfr. Part No.TK42A12N1,S4X(S
BrandToshiba
SGD1.198
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N 42 A 120 V 9.4 mΩ TO-220SIS Through Hole 3 -20 V, +20 V Enhancement 4V - 35 W Single 1
RS Stock No. 671-4963
Mfr. Part No.FQA70N10
SGD4.67
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N 70 A 100 V 23 mΩ TO-3PN Through Hole 3 -25 V, +25 V Enhancement - 2V 214 W Single 1
RS Stock No. 178-7451
Mfr. Part No.IPT007N06NATMA1
BrandInfineon
SGD5.293
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N 300 A 60 V 1 mΩ HSOF Surface Mount 8 -20 V, +20 V Enhancement - - 375 W Single 1
RS Stock No. 897-7412
Mfr. Part No.IPP111N15N3GXKSA1
BrandInfineon
SGD6.678
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N 83 A 150 V 11.3 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement 4V 2V 214 W Single 1
RS Stock No. 121-9414
Mfr. Part No.ZXM61P02FTA
SGD0.166
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P 900 mA 20 V 900 mΩ SOT-23 Surface Mount 3 -12 V, +12 V Enhancement 1.5V - 806 mW Single 1
RS Stock No. 919-4876
Mfr. Part No.IRF520NPBF
BrandInfineon
SGD1.418
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N 9.7 A 100 V 200 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 48 W Single 1
RS Stock No. 178-0891
Mfr. Part No.SIHG70N60EF-GE3
BrandVishay
SGD16.674
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N 70 A 600 V 38 mΩ TO-247AC Through Hole 3 -30 V, +30 V Enhancement - 2V 520 W Single 1
RS Stock No. 145-4671
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N 4.5 A 500 V 1.55 Ω TO-220F Through Hole 3 -30 V, +30 V Enhancement - 3V 28 W Single 1
RS Stock No. 166-2647
Mfr. Part No.FDD86102LZ
SGD0.662
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N 8 A 100 V 40 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement - 1V 54 W Single 1
RS Stock No. 761-3971
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P 7.5 A 30 V 54 mΩ SOT-223 Surface Mount 3 + Tab -20 V, +20 V Enhancement - 1V 3 W Single 1