P-Channel MOSFET, 330 mA, 60 V, 3-Pin SOT-23 Infineon BSS83PH6327XTSA1
- RS Stock No.:
- 753-2857
- Mfr. Part No.:
- BSS83PH6327XTSA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 22/05/2025, delivery within 4 working days from despatch date
Added
Price Each (In a Pack of 50)
SGD0.413
(exc. GST)
SGD0.45
(inc. GST)
| Units | Per unit | Per Pack* |
| 50 - 50 | SGD0.413 | SGD20.65 |
| 100 - 200 | SGD0.405 | SGD20.25 |
| 250 - 450 | SGD0.397 | SGD19.85 |
| 500 - 2450 | SGD0.389 | SGD19.45 |
| 2500 + | SGD0.32 | SGD16.00 |
| *price indicative | ||
- RS Stock No.:
- 753-2857
- Mfr. Part No.:
- BSS83PH6327XTSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 330 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Series | SIPMOS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 360 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 2.38 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 2.9mm |
| Maximum Operating Temperature | +150 °C |
| Width | 1.3mm |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |