Power Integrations SiC Schottky, Single, 12 A, 2-Pin 600 V TO-220
- RS Stock No.:
- 231-8073
- Mfr. Part No.:
- QH12TZ600Q
- Manufacturer:
- Power Integrations
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- RS Stock No.:
- 231-8073
- Mfr. Part No.:
- QH12TZ600Q
- Manufacturer:
- Power Integrations
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Power Integrations | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 12A | |
| Product Type | SiC Schottky | |
| Mount Type | Through Hole | |
| Sub Type | SiC Schottky | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Maximum Power Dissipation Pd | 61mW | |
| Maximum Forward Voltage Vf | 3.1V | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Peak Reverse Recovery Time trr | 20.5ns | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 30.73mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Power Integrations | ||
Diode Configuration Single | ||
Maximum Forward Current If 12A | ||
Product Type SiC Schottky | ||
Mount Type Through Hole | ||
Sub Type SiC Schottky | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Maximum Power Dissipation Pd 61mW | ||
Maximum Forward Voltage Vf 3.1V | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 600V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Peak Reverse Recovery Time trr 20.5ns | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 30.73mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.
Features and Benefits
Low QRR, low IRRM, low tRR
High dIF/dt capable (1000 A / μs)
Soft recovery
AEC-Q101 qualified
Fab, assembly and test certified to IATF 16949
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Applications
Power Factor Correction boost diode in on-board charger
Output rectifier of on-board charger
Related links
- Power Integrations Switching Diode 2-Pin TO-220AC QH12TZ600Q
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- IXYS Switching Diode 2-Pin TO-220AC DSEP12-12A
- Infineon Switching Diode, 12A 1200V PG-TO220-2 IDP12E120XKSA1
- Power Integrations 300 V 30 A Diode Silicon 2-Pin TO-220AC
- Power Integrations 600 V 12 A Diode Silicon 3-Pin TO-220AC
- Power Integrations 600 V 12 A Diode Silicon 3-Pin TO-220AC QH12TZ600
- Power Integrations 300 V 30 A Diode Silicon 2-Pin TO-220AC LQA30T300
