Renesas Electronics SRAM- 16 kB
- RS Stock No.:
- 262-8968
- Mfr. Part No.:
- 6116LA25SOGI
- Manufacturer:
- Renesas Electronics
This image is representative of the product range
Subtotal (1 tube of 310 units)*
SGD2,270.44
(exc. GST)
SGD2,474.73
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 03 July 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 310 + | SGD7.324 | SGD2,270.44 |
*price indicative
- RS Stock No.:
- 262-8968
- Mfr. Part No.:
- 6116LA25SOGI
- Manufacturer:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Memory Size | 16kB | |
| Product Type | SRAM | |
| Organisation | 2k x 8 | |
| Maximum Random Access Time | 25ns | |
| Minimum Supply Voltage | 4.5V | |
| Timing Type | Asynchronous | |
| Maximum Supply Voltage | 5.5V | |
| Mount Type | Surface | |
| Package Type | Tube | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 24 | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | REACH, RoHS | |
| Series | 6116LA25 | |
| Automotive Standard | No | |
| Supply Current | 95mA | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Memory Size 16kB | ||
Product Type SRAM | ||
Organisation 2k x 8 | ||
Maximum Random Access Time 25ns | ||
Minimum Supply Voltage 4.5V | ||
Timing Type Asynchronous | ||
Maximum Supply Voltage 5.5V | ||
Mount Type Surface | ||
Package Type Tube | ||
Minimum Operating Temperature -40°C | ||
Pin Count 24 | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals REACH, RoHS | ||
Series 6116LA25 | ||
Automotive Standard No | ||
Supply Current 95mA | ||
- COO (Country of Origin):
- TW
The Renesas Electronics CMOS SRAM is organized as 2K x 8. The SRAM offers a reduced power standby mode. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Low-power consumption
Battery backup operation 2V data retention voltage
Produced with advanced CMOS high-performance technology
CMOS process virtually eliminates alpha particle soft-error rates
Input and output directly TTL-compatible
No clocks or refresh required
Related links
- Renesas Electronics SRAM, 6116LA25SOGI- 16kB
- Renesas Electronics SRAM, 7130LA20JG- 8kbit
- Renesas Electronics SRAM, RMLV1616AGSD-5S2#AC0- 16Mbit
- Renesas Electronics SRAM Memory, 71V016SA12PHGI- 1Mbit
- Renesas Electronics SRAM, 71321LA55PPGI- 16kbit
- Renesas Electronics SRAM, 71V416L15PHGI- 4Mbit
- Renesas Electronics SRAM, 7024L15PFG- 64kbit
- Renesas Electronics SRAM, 7130LA25PFGI- 8kbit
