Alliance Memory AS4C32M16MD1B-5BIN SDRAM 64 MB Surface Mount, 60-Pin 16 bit FBGA
- RS Stock No.:
- 842-629
- Mfr. Part No.:
- AS4C32M16MD1B-5BIN
- Manufacturer:
- Alliance Memory
N
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View bulk pricing optionsSubtotal (1 unit)*
SGD10.58
(exc. GST)
SGD11.53
(inc. GST)
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Temporarily out of stock
- Shipping from 04 January 2027
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Units | Per unit |
|---|---|
| 1 - 9 | SGD10.58 |
| 10 - 49 | SGD10.36 |
| 50 - 99 | SGD10.04 |
| 100 + | SGD9.42 |
*price indicative
- RS Stock No.:
- 842-629
- Mfr. Part No.:
- AS4C32M16MD1B-5BIN
- Manufacturer:
- Alliance Memory
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Alliance Memory | |
| Product Type | SDRAM | |
| Memory Size | 64MB | |
| Organisation | 32M x 16 bit | |
| Data Bus Width | 16bit | |
| Number of Bits per Word | 16 | |
| Maximum Clock Frequency | 200MHz | |
| Maximum Random Access Time | 5ns | |
| Number of Words | 4 word | |
| Mount Type | Surface Mount | |
| Package Type | FBGA | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 60 | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | JEDEC | |
| Series | AS4C32M16MD1B | |
| Automotive Standard | No | |
| Minimum Supply Voltage | 1.7V | |
| Maximum Supply Voltage | 1.95V | |
| Select all | ||
|---|---|---|
Brand Alliance Memory | ||
Product Type SDRAM | ||
Memory Size 64MB | ||
Organisation 32M x 16 bit | ||
Data Bus Width 16bit | ||
Number of Bits per Word 16 | ||
Maximum Clock Frequency 200MHz | ||
Maximum Random Access Time 5ns | ||
Number of Words 4 word | ||
Mount Type Surface Mount | ||
Package Type FBGA | ||
Minimum Operating Temperature -40°C | ||
Pin Count 60 | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals JEDEC | ||
Series AS4C32M16MD1B | ||
Automotive Standard No | ||
Minimum Supply Voltage 1.7V | ||
Maximum Supply Voltage 1.95V | ||
- COO (Country of Origin):
- TW
The Alliance Memory Mobile DDR SDRAM is a high-performance 512M memory solution designed for efficient operation. Its low voltage and double-data-rate architecture ensure quick data transfers while supporting Advanced power-saving features.
Double-data-rate architecture allows for two data transfers per clock cycle
Low voltage operation enhances power efficiency during use
Built-in Temperature Compensated Self Refresh improves energy savings
Supports various burst lengths and CAS latencies for flexible performance