Intelligent Memory IM2G16D3FDBG-125I SDRAM 2 GB Surface, 96-Pin 16 bit FBGA-96 Ball
- RS Stock No.:
- 588-635
- Mfr. Part No.:
- IM2G16D3FDBG-125I
- Manufacturer:
- Intelligent Memory
Subtotal (1 pack of 2 units)*
SGD51.58
(exc. GST)
SGD56.22
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | SGD25.79 | SGD51.58 |
*price indicative
- RS Stock No.:
- 588-635
- Mfr. Part No.:
- IM2G16D3FDBG-125I
- Manufacturer:
- Intelligent Memory
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Product Type | SDRAM | |
| Memory Size | 2GB | |
| Data Bus Width | 16bit | |
| Maximum Clock Frequency | 933MHz | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 13.5ns | |
| Number of Words | 16 | |
| Mount Type | Surface | |
| Package Type | FBGA-96 Ball | |
| Pin Count | 96 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 95°C | |
| Height | 1.2mm | |
| Standards/Approvals | RoHS | |
| Length | 13mm | |
| Minimum Supply Voltage | 1.283V | |
| Automotive Standard | No | |
| Maximum Supply Voltage | 1.45V | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Product Type SDRAM | ||
Memory Size 2GB | ||
Data Bus Width 16bit | ||
Maximum Clock Frequency 933MHz | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 13.5ns | ||
Number of Words 16 | ||
Mount Type Surface | ||
Package Type FBGA-96 Ball | ||
Pin Count 96 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 95°C | ||
Height 1.2mm | ||
Standards/Approvals RoHS | ||
Length 13mm | ||
Minimum Supply Voltage 1.283V | ||
Automotive Standard No | ||
Maximum Supply Voltage 1.45V | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
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