Vishay 650 V 4 A Rectifier & Schottky Diode SiC Merged PIN Schottky 3-Pin D2PAK VS-3C04ET07S2L-M3
- RS Stock No.:
- 279-9428
- Mfr. Part No.:
- VS-3C04ET07S2L-M3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
SGD8.80
(exc. GST)
SGD9.60
(inc. GST)
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In Stock
- 650 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | SGD4.40 | SGD8.80 |
| 20 - 48 | SGD3.565 | SGD7.13 |
| 50 - 98 | SGD3.145 | SGD6.29 |
| 100 - 248 | SGD2.935 | SGD5.87 |
| 250 + | SGD2.725 | SGD5.45 |
*price indicative
- RS Stock No.:
- 279-9428
- Mfr. Part No.:
- VS-3C04ET07S2L-M3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | VS-3C04ET07 | |
| Rectifier Type | SiC Merged PIN Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 29A | |
| Peak Reverse Current Ir | 25μA | |
| Maximum Forward Voltage Vf | 1.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | UL, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series VS-3C04ET07 | ||
Rectifier Type SiC Merged PIN Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 29A | ||
Peak Reverse Current Ir 25μA | ||
Maximum Forward Voltage Vf 1.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals UL, RoHS | ||
Automotive Standard No | ||
The Vishay 650 V power SiC Gen 3 merged PIN schottky diode. It comes with improved VF and efficiency by thin wafer technology. Majority carrier diode using Schottky technology on SiC wide band gap material.
RoHS compliant
Halogen free
UL 94 V-0 flammability rating
Very low profile
Temperature invariant switching behaviour
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