STMicroelectronics 650 V 4 A Diode 2-Pin D2PAK
- RS Stock No.:
- 201-0882P
- Mfr. Part No.:
- STPSC4H065B-TR
- Manufacturer:
- STMicroelectronics
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View bulk pricing optionsSubtotal 30 units (supplied on a continuous strip)*
SGD67.83
(exc. GST)
SGD73.92
(inc. GST)
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- Shipping from 19 February 2027
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Units | Per unit |
|---|---|
| 30 - 40 | SGD2.261 |
| 50 + | SGD2.121 |
*price indicative
- RS Stock No.:
- 201-0882P
- Mfr. Part No.:
- STPSC4H065B-TR
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 35μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Maximum Operating Temperature | 175°C | |
| Length | 28.25mm | |
| Standards/Approvals | No | |
| Diameter | 3.75mm | |
| Height | 4.5mm | |
| Width | 10mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 35μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Maximum Operating Temperature 175°C | ||
Length 28.25mm | ||
Standards/Approvals No | ||
Diameter 3.75mm | ||
Height 4.5mm | ||
Width 10mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
No reverse recovery charge in application current range
Switching behavior independent of temperature
High forward surge capability
Power efficient product