onsemi 1200 V 22.5 A Diode Schottky 3-Pin DPAK FFSD08120A
- RS Stock No.:
- 178-4651
- Mfr. Part No.:
- FFSD08120A
- Manufacturer:
- onsemi
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SGD7.96
(exc. GST)
SGD8.68
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 9 | SGD7.96 |
| 10 - 99 | SGD7.70 |
| 100 - 499 | SGD7.32 |
| 500 - 999 | SGD6.96 |
| 1000 + | SGD6.62 |
*price indicative
- RS Stock No.:
- 178-4651
- Mfr. Part No.:
- FFSD08120A
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 22.5A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.75V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 530A | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 22.5A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.75V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 530A | ||
Peak Reverse Current Ir 400μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
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