SiC Schottky Diode 1200V 2A TO-220-2

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Diodes and Rectifiers, Infineon