STMicroelectronics 1200 V 5 A Schottky Diode Silicon Carbide Schottky Diode 3-Pin DPAK HV STPSC5G12B2-TR
- RS Stock No.:
- 898-601
- Mfr. Part No.:
- STPSC5G12B2-TR
- Manufacturer:
- STMicroelectronics
N
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SGD3.42
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SGD3.73
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Units | Per unit |
|---|---|
| 1 - 9 | SGD3.42 |
| 10 - 24 | SGD2.88 |
| 25 - 99 | SGD1.74 |
| 100 - 499 | SGD1.70 |
| 500 + | SGD1.66 |
*price indicative
- RS Stock No.:
- 898-601
- Mfr. Part No.:
- STPSC5G12B2-TR
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Schottky Diode | |
| Mount Type | Surface Mount | |
| Package Type | DPAK HV | |
| Maximum Continuous Forward Current If | 5A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | STPS | |
| Diode Configuration | Schottky | |
| Rectifier Type | Silicon Carbide Schottky Diode | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.35V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 345A | |
| Peak Reverse Current Ir | 125μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | ECOPACK2 | |
| Width | 2.4mm | |
| Height | 10.1mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Schottky Diode | ||
Mount Type Surface Mount | ||
Package Type DPAK HV | ||
Maximum Continuous Forward Current If 5A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series STPS | ||
Diode Configuration Schottky | ||
Rectifier Type Silicon Carbide Schottky Diode | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.35V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 345A | ||
Peak Reverse Current Ir 125μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals ECOPACK2 | ||
Width 2.4mm | ||
Height 10.1mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics ultrahigh performance power Schottky rectifier is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Switching behavior independent of temperature
Robust high voltage periphery
None or negligible reverse recovery