P-Channel MOSFET, 17.5 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2006UFG-7
- RS Stock No.:
- 921-1139
- Mfr. Part No.:
- DMP2006UFG-7
- Manufacturer:
- DiodesZetex
Subtotal (1 pack of 20 units)**
SGD16.70
(exc. GST)
SGD18.20
(inc. GST)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Pack** |
---|---|---|
20 - 80 | SGD0.835 | SGD16.70 |
100 - 480 | SGD0.794 | SGD15.88 |
500 - 980 | SGD0.755 | SGD15.10 |
1000 - 2480 | SGD0.717 | SGD14.34 |
2500 + | SGD0.682 | SGD13.64 |
**price indicative
- RS Stock No.:
- 921-1139
- Mfr. Part No.:
- DMP2006UFG-7
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
---|---|---|
Manufacturer | DiodesZetex | |
Channel Type | P | |
Maximum Continuous Drain Current | 17.5 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | PowerDI3333-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 17 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1V | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 41 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -10 V, +10 V | |
Width | 3.35mm | |
Length | 3.35mm | |
Typical Gate Charge @ Vgs | 140 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 0.8mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Manufacturer DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 17.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type PowerDI3333-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 17 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 41 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Width 3.35mm | ||
Length 3.35mm | ||
Typical Gate Charge @ Vgs 140 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 0.8mm | ||
Forward Diode Voltage 1.2V | ||
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