N-Channel MOSFET, 14.2 A, 40 V, 8-Pin PowerDI3333-8 Diodes Inc DMN4010LFG-7
- RS Stock No.:
- 921-1108P
- Mfr. Part No.:
- DMN4010LFG-7
- Manufacturer:
- DiodesZetex
Subtotal (5 reels of 20 units)**. Quantities below 150 on continuous strip
SGD77.20
(exc. GST)
SGD84.10
(inc. GST)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit |
---|---|
100 - 480 | SGD0.733 |
500 - 980 | SGD0.697 |
1000 - 2480 | SGD0.662 |
2500 + | SGD0.63 |
**price indicative
- RS Stock No.:
- 921-1108P
- Mfr. Part No.:
- DMN4010LFG-7
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
---|---|---|
Manufacturer | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 14.2 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | PowerDI3333-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 15 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.45 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 3.35mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
Transistor Material | Si | |
Width | 3.35mm | |
Number of Elements per Chip | 1 | |
Forward Diode Voltage | 0.72V | |
Height | 0.8mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 14.2 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PowerDI3333-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 15 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3.35mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Transistor Material Si | ||
Width 3.35mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 0.72V | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||