Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-252

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Subtotal 40 units (supplied on a continuous strip)*

SGD124.52

(exc. GST)

SGD135.72

(inc. GST)

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40 - 76SGD3.113
80 +SGD3.018

*price indicative

Packaging Options:
RS Stock No.:
827-6126P
Mfr. Part No.:
TK12P60W,RVQ(S
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.5A

Maximum Drain Source Voltage Vds

600V

Series

DTMOSIV

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

340mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Forward Voltage Vf

-1.7V

Maximum Power Dissipation Pd

100W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.6mm

Width

6.1 mm

Height

2.3mm

Automotive Standard

No

COO (Country of Origin):
CN

MOSFET Transistors, Toshiba


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