N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS
- RS Stock No.:
- 827-4919P
- Mfr. Part No.:
- CSD19536KCS
- Manufacturer:
- Texas Instruments
Temporarily out of stock - back order for despatch 22/05/2024, delivery within 4 working days from despatch date
Added
Price Each (Supplied in a Tube)
SGD6.42
(exc. GST)
SGD7.00
(inc. GST)
| Units | Per unit |
| 6 - 8 | SGD6.42 |
| 10 + | SGD6.02 |
- RS Stock No.:
- 827-4919P
- Mfr. Part No.:
- CSD19536KCS
- Manufacturer:
- Texas Instruments
Technical data sheets
Legislation and Compliance
Product Details
N-Channel NexFET™ Power MOSFET, Texas Instruments
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Texas Instruments
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 259 A |
| Maximum Drain Source Voltage | 100 V |
| Series | NexFET |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.2V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 10.67mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 118 nC @ 10 V |
| Width | 4.7mm |
| Height | 16.51mm |
| Minimum Operating Temperature | -55 °C |