N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

RS Stock No.:: 827-4919P
Mfr. Part No.:: CSD19536KCS
Manufacturer:: Texas Instruments

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

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Price Each (Supplied in a Tube)

SGD6.165

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SGD6.72

(inc. GST)

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Units	Per unit
6 - 8	SGD5.935
10 +	SGD5.565

RS Stock No.:: 827-4919P
Mfr. Part No.:: CSD19536KCS
Manufacturer:: Texas Instruments

ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	259 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220
Series	NexFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.2V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.7mm
Typical Gate Charge @ Vgs	118 nC @ 10 V
Transistor Material	Si
Length	10.67mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Height	16.51mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

FREE delivery for orders over SGD250.00 (ex GST)

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