N-Channel MOSFET, 280 mA, 50 V, 3-Pin SOT-523 Diodes Inc DMN5L06TK-7
- RS Stock No.:
- 822-2582P
- Mfr. Part No.:
- DMN5L06TK-7
- Manufacturer:
- DiodesZetex
Bulk discount available
Subtotal (2 reels of 50 units)**. Quantities below 150 on continuous strip
SGD63.20
(exc. GST)
SGD68.90
(inc. GST)
999999 In stock for delivery within 1 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit |
---|---|
100 - 200 | SGD0.488 |
250 - 450 | SGD0.364 |
500 - 950 | SGD0.318 |
1000 + | SGD0.285 |
**price indicative
- RS Stock No.:
- 822-2582P
- Mfr. Part No.:
- DMN5L06TK-7
- Manufacturer:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 280 mA | |
Maximum Drain Source Voltage | 50 V | |
Package Type | SOT-523 (SC-89) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 3 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 150 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Length | 1.7mm | |
Width | 0.85mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Height | 0.8mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 280 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-523 (SC-89) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 150 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 1.7mm | ||
Width 0.85mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||