Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3
- RS Stock No.:
- 812-3132
- Mfr. Part No.:
- SI2366DS-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 pack of 20 units)*
SGD10.10
(exc. GST)
SGD11.00
(inc. GST)
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- Plus 340 unit(s) shipping from 22 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD0.505 | SGD10.10 |
| 40 - 80 | SGD0.46 | SGD9.20 |
| 100 - 180 | SGD0.417 | SGD8.34 |
| 200 - 380 | SGD0.378 | SGD7.56 |
| 400 + | SGD0.363 | SGD7.26 |
*price indicative
- RS Stock No.:
- 812-3132
- Mfr. Part No.:
- SI2366DS-T1-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | Si2366DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.85V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series Si2366DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.85V | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.02mm | ||
Length 3.04mm | ||
Width 1.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si2366DS Series MOSFET, 30V Maximum Drain Source Voltage, 5.8A Maximum Continuous Drain Current - SI2366DS-T1-GE3
Features and Benefits:
• 5.8A continuous drain current supports moderate load currents
• 30V drain-source rating enables low-voltage power rails
• 6.4nC typical gate charge permits fast gate transitions
• 2.1W power dissipation allows for sustained thermal loading
• 150°C maximum operating temperature endures elevated environments
Applications
• Ideal for load switching in control and Interface modules
• Used for motor driver stages in small electromechanical systems
• Can be used for battery protection and power-path management
• Used with Compact consumer power supplies requiring surface-mount parts
What mounting style does it require for PCB assembly?
What gate voltage endurance should designers expect?
How wide an ambient temperature range can it operate in?
What mechanical package size considerations are there for layout?
Are there environmental or regulatory characteristics to note?
Related links
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- Vishay Si2308BDS Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay Si2374DS Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si2304DDS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
