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    N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3

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    Subtotal (1 pack of 20 units)**

    SGD9.50

    (exc. GST)

    SGD10.36

    (inc. GST)

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    240 In stock for delivery within 4 working days*

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    Units
    Per unit
    Per Pack**
    20 - 20SGD0.475SGD9.50
    40 - 80SGD0.432SGD8.64
    100 - 180SGD0.392SGD7.84
    200 - 380SGD0.355SGD7.10
    400 +SGD0.341SGD6.82

    **price indicative

    Packaging Options:
    RS Stock No.:
    812-3132
    Mfr. Part No.:
    SI2366DS-T1-GE3
    Manufacturer:
    Vishay
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    Manufacturer

    Vishay

    Channel Type

    N

    Maximum Continuous Drain Current

    5.8 A

    Maximum Drain Source Voltage

    30 V

    Package Type

    SOT-23

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    42 mΩ

    Channel Mode

    Enhancement

    Minimum Gate Threshold Voltage

    1.2V

    Maximum Power Dissipation

    2.1 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Width

    1.4mm

    Typical Gate Charge @ Vgs

    6.4 nC @ 10 V

    Length

    3.04mm

    Maximum Operating Temperature

    +150 °C

    Number of Elements per Chip

    1

    Transistor Material

    Si

    Height

    1.02mm

    Minimum Operating Temperature

    -55 °C

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