N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Vishay Si2338DS-T1-GE3
- RS Stock No.:
- 812-3126
- Mfr. Part No.:
- Si2338DS-T1-GE3
- Manufacturer:
- Vishay
8020 In stock for delivery within 4 working days
Added
Price Each (In a Pack of 20)
SGD0.597
(exc. GST)
SGD0.651
(inc. GST)
| Units | Per unit | Per Pack* |
| 20 - 40 | SGD0.597 | SGD11.94 |
| 60 - 80 | SGD0.574 | SGD11.48 |
| 100 + | SGD0.538 | SGD10.76 |
| *price indicative | ||
- RS Stock No.:
- 812-3126
- Mfr. Part No.:
- Si2338DS-T1-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 33 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 3.04mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 8.2 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Width | 1.4mm |
| Height | 1.02mm |
| Minimum Operating Temperature | -55 °C |