N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Vishay Si2338DS-T1-GE3
- RS Stock No.:
- 812-3126
- Mfr. Part No.:
- Si2338DS-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)**
SGD13.54
(exc. GST)
SGD14.76
(inc. GST)
7980 In stock for delivery within 4 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Pack** |
---|---|---|
20 - 40 | SGD0.677 | SGD13.54 |
60 - 80 | SGD0.651 | SGD13.02 |
100 + | SGD0.61 | SGD12.20 |
**price indicative
- RS Stock No.:
- 812-3126
- Mfr. Part No.:
- Si2338DS-T1-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 6 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 33 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 3.04mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Width | 1.4mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 8.2 nC @ 10 V | |
Height | 1.02mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 1.4mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 8.2 nC @ 10 V | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
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