Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3

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Subtotal (1 pack of 20 units)*

SGD13.54

(exc. GST)

SGD14.76

(inc. GST)

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20 - 40SGD0.677SGD13.54
60 - 80SGD0.651SGD13.02
100 +SGD0.61SGD12.20

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Packaging Options:
RS Stock No.:
812-3126
Mfr. Part No.:
Si2338DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

Si2338DS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.033Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

4.2nC

Maximum Operating Temperature

150°C

Height

1.02mm

Width

1.4 mm

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Length

3.04mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


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