N-Channel MOSFET, 35 A, 55 V, 3-Pin TO-220AB onsemi HUF75321P3
- RS Stock No.:
- 807-6673
- Mfr. Part No.:
- HUF75321P3
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)**
SGD17.41
(exc. GST)
SGD18.98
(inc. GST)
90 In stock for delivery within 4 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Pack** |
---|---|---|
10 - 10 | SGD1.741 | SGD17.41 |
20 - 40 | SGD1.667 | SGD16.67 |
50 - 90 | SGD1.535 | SGD15.35 |
100 - 190 | SGD1.465 | SGD14.65 |
200 + | SGD1.448 | SGD14.48 |
**price indicative
- RS Stock No.:
- 807-6673
- Mfr. Part No.:
- HUF75321P3
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 35 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | TO-220AB | |
Series | UltraFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 34 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 93 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 36 nC @ 20 V | |
Width | 4.7mm | |
Length | 10.67mm | |
Height | 16.3mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series UltraFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 34 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 93 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 36 nC @ 20 V | ||
Width 4.7mm | ||
Length 10.67mm | ||
Height 16.3mm | ||
Minimum Operating Temperature -55 °C | ||
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