Vishay Single Type N, Type N-Channel MOSFET, 1.15 A, 100 V Enhancement, 3-Pin SOT-23 SI2328DS-T1-GE3
- RS Stock No.:
- 787-9229
- Mfr. Part No.:
- SI2328DS-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD9.99
(exc. GST)
SGD10.89
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.999 | SGD9.99 |
| 20 - 40 | SGD0.979 | SGD9.79 |
| 50 - 90 | SGD0.949 | SGD9.49 |
| 100 - 190 | SGD0.926 | SGD9.26 |
| 200 + | SGD0.905 | SGD9.05 |
*price indicative
- RS Stock No.:
- 787-9229
- Mfr. Part No.:
- SI2328DS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.25W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.45nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Mount Type Surface, Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.25W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.45nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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