N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXYS IXFK27N80Q
- RS Stock No.:
- 711-5382P
- Mfr. Part No.:
- IXFK27N80Q
- Manufacturer:
- IXYS
16 In stock for delivery within 4 working days
Added
Price Each (Supplied in a Tube)
SGD39.88
(exc. GST)
SGD43.47
(inc. GST)
| Units | Per unit |
| 13 + | SGD39.88 |
- RS Stock No.:
- 711-5382P
- Mfr. Part No.:
- IXFK27N80Q
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Q Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 27 A |
| Maximum Drain Source Voltage | 800 V |
| Series | HiperFET, Q-Class |
| Package Type | TO-264AA |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 320 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 500 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 170 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 19.96mm |
| Transistor Material | Si |
| Width | 5.13mm |
| Minimum Operating Temperature | -55 °C |
| Height | 26.16mm |