P-Channel MOSFET, 27 A, 60 V, 3-Pin TO-220AB onsemi FQP27P06
- RS Stock No.:
- 671-5064
- Mfr. Part No.:
- FQP27P06
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)**
SGD15.12
(exc. GST)
SGD16.48
(inc. GST)
230 In Global stock for delivery within 3 working day(s)*
135 In Global stock for delivery within 4 working day(s)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Pack** |
---|---|---|
5 - 20 | SGD3.024 | SGD15.12 |
25 - 95 | SGD2.962 | SGD14.81 |
100 - 245 | SGD2.872 | SGD14.36 |
250 - 495 | SGD2.784 | SGD13.92 |
500 + | SGD2.70 | SGD13.50 |
**price indicative
- RS Stock No.:
- 671-5064
- Mfr. Part No.:
- FQP27P06
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 27 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-220AB | |
Series | QFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 70 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 120 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
Width | 4.7mm | |
Transistor Material | Si | |
Length | 10.1mm | |
Maximum Operating Temperature | +175 °C | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 27 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 120 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Width 4.7mm | ||
Transistor Material Si | ||
Length 10.1mm | ||
Maximum Operating Temperature +175 °C | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
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