NDT3055L N-Channel MOSFET, 4 A, 60 V, 3+Tab-Pin SOT-223 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 4 A
Maximum Drain Source Voltage 60 V
Package Type SOT-223
Mounting Type Surface Mount
Pin Count 3 + Tab
Maximum Drain Source Resistance 100 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 3 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Length 6.5mm
Maximum Operating Temperature +150 °C
Height 1.6mm
Typical Gate Charge @ Vgs 13 nC @ 10 V
Minimum Operating Temperature -65 °C
Transistor Material Si
Width 3.56mm
155 In stock for delivery within 3 working days
Price Each (In a Pack of 5)
SGD 0.83
(exc. GST)
SGD 0.89
(inc. GST)
units
Per unit
Per Pack*
5 - 20
SGD0.83
SGD4.15
25 - 95
SGD0.74
SGD3.70
100 - 245
SGD0.622
SGD3.11
250 - 495
SGD0.612
SGD3.06
500 +
SGD0.608
SGD3.04
*price indicative
Packaging Options:
Related Products
The Supertex range of N-channel enhancement-mode (normally-off) DMOS ...
Description:
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching ...
The Supertex range of P-channel enhancement-mode (normally-off) DMOS ...
Description:
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching ...
The Microchip Technology through-hole mount N-channel MOSFET is ...
Description:
The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 5ohms at a gate-source voltage of 10V. It has a drain-source voltage of 60V and a maximum gate-source voltage of 30V. It has ...
The Infineon SIPMOS® small Signal P- channel MOSFETs ...
Description:
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety ...