onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement, 3-Pin TO-263 FQB12P20TM

RS Stock No.:: 671-0860
Mfr. Part No.:: FQB12P20TM
Manufacturer:: onsemi

onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement, 3-Pin TO-263 FQB12P20TM

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Subtotal (1 pack of 5 units)*

SGD16.09

(exc. GST)

SGD17.54

(inc. GST)

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In Stock

5 unit(s) ready to ship from another location
Plus 245 unit(s) shipping from 05 January 2026

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Units	Per unit	Per Pack*
5 - 10	SGD3.218	SGD16.09
15 - 20	SGD3.096	SGD15.48
25 +	SGD2.904	SGD14.52

*price indicative

RS Stock No.:: 671-0860
Mfr. Part No.:: FQB12P20TM
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	11.5A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-263
	Series	QFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	470mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	3.13W
	Typical Gate Charge Qg @ Vgs	31nC
	Forward Voltage Vf	-5V
	Maximum Operating Temperature	150°C
	Width	9.65 mm
	Standards/Approvals	No
	Height	4.83mm
	Length	10.67mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 11.5A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-263
	Series QFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 470mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 3.13W
	Typical Gate Charge Qg @ Vgs 31nC
	Forward Voltage Vf -5V
	Maximum Operating Temperature 150°C
	Width 9.65 mm
	Standards/Approvals No
	Height 4.83mm
	Length 10.67mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.