onsemi FDS Type P-Channel MOSFET, 8.8 A, 30 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 671-0508P
- Mfr. Part No.:
- FDS4435BZ
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
SGD23.30
(exc. GST)
SGD25.40
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Limited stock
- 12,560 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 95 | SGD0.932 |
| 100 - 245 | SGD0.912 |
| 250 - 495 | SGD0.894 |
| 500 + | SGD0.874 |
*price indicative
- RS Stock No.:
- 671-0508P
- Mfr. Part No.:
- FDS4435BZ
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | FDS | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series FDS | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi FDS Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi FDS Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC FDS4435BZ
- onsemi FDS Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
- onsemi FDS Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC FDS4465
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SI4435DY
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
