N-Channel MOSFET, 10 A, 100 V, 3-Pin PW Mold Toshiba 2SK3669(Q)
- RS Stock No.:
- 601-2116
- Mfr. Part No.:
- 2SK3669(Q)
- Manufacturer:
- Toshiba
25 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 5)
SGD0.968
(exc. GST)
SGD1.055
(inc. GST)
| Units | Per unit | Per Pack* |
| 5 - 20 | SGD0.968 | SGD4.84 |
| 25 - 120 | SGD0.948 | SGD4.74 |
| 125 - 245 | SGD0.92 | SGD4.60 |
| 250 + | SGD0.89 | SGD4.45 |
| *price indicative | ||
- RS Stock No.:
- 601-2116
- Mfr. Part No.:
- 2SK3669(Q)
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Voltage | 100 V |
| Series | 2SK |
| Package Type | PW Mold |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 125 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 20 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 6.5mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 8 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 5.5mm |
| Minimum Operating Temperature | -55 °C |
| Height | 2.3mm |