Toshiba 2SK Type N-Channel MOSFET, 200 mA, 30 V Enhancement, 3-Pin SOT-346 2SK2009(F)
- RS Stock No.:
- 601-1983
- Mfr. Part No.:
- 2SK2009(F)
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD4.85
(exc. GST)
SGD5.29
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 360 unit(s) shipping from 29 December 2025
- Plus 2,280 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.485 | SGD4.85 |
| 20 - 40 | SGD0.475 | SGD4.75 |
| 50 - 90 | SGD0.462 | SGD4.62 |
| 100 - 190 | SGD0.45 | SGD4.50 |
| 200 + | SGD0.44 | SGD4.40 |
*price indicative
- RS Stock No.:
- 601-1983
- Mfr. Part No.:
- 2SK2009(F)
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-346 | |
| Series | 2SK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 1.1mm | |
| Width | 1.5 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-346 | ||
Series 2SK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 1.1mm | ||
Width 1.5 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
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